| DOI | Resolve DOI: https://doi.org/10.1557/PROC-373-511 |
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| Author | Search for: Simpson, T. W.; Search for: Love, D.; Search for: Endisch, D.; Search for: Goldberg, R. D.; Search for: Mitchell, I. V.; Search for: Haynes, T. E.; Search for: Baribeau, J.-M.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 1994 MRS Fall Meeting: Symposium Y: Microstructure of Irradiated Materials, November 29 - December 1, 1994, Boston, MA |
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| Abstract | We have examined the damage produced by Si-ion implantation into strained Si₁₋ₓGeₓ epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channelling techniques to determine the amorphization threshold in strained Si₁₋ₓGeₓ, (x = 0.16 and 0.29) over the temperature range 30-110°C. The results are compared with previously reported measurements on unstrained Si₁₋ₓGeₓ, and with the simple model used to describe those results. We report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer. |
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| Publication date | 1995 |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12339341 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 89f7d215-f251-4818-a9e0-8233ed7aa355 |
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| Record created | 2009-09-11 |
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| Record modified | 2020-04-29 |
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