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Selective growth of GaN on SiC substrate patterned with an AlN seed layer by ammonia-source molecular beam epitaxy

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.1413956
AuthorSearch for: 1; Search for: 1; Search for: 2; Search for: 1; Search for: 1; Search for: 1
Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
  2. National Research Council Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Publication date
In
  • Applied Physics Letters 79, no. 17 (2001): 2764–.
LanguageEnglish
Peer reviewedYes
NPARC number12327100
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Record identifier89a616a4-e623-42e5-80b9-67c4a2a17e00
Record created2009-09-10
Record modified2023-05-10
Date modified: