| DOI | Resolve DOI: https://doi.org/10.1126/science.1176112 |
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| Author | Search for: Gabor, N. M.; Search for: Zhong, Z.; Search for: Bosnick, K.1; Search for: Park, J.; Search for: Mceuen, P. L. |
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| Affiliation | - National Research Council of Canada. Nanotechnology
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| Format | Text, Article |
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| Abstract | We observed highly efficient generation of electron-hole pairs due to impact excitation in single-walled carbon nanotube p-n junction photodiodes. Optical excitation into the second electronic subband E22 leads to striking photocurrent steps in the device I-VSD characteristics that occur at voltage intervals of the band-gap energy EGAP/e. Spatially and spectrally resolved photocurrent combined with temperature-dependent studies suggest that these steps result from efficient generation of multiple electron-hole pairs from a single hot E22 carrier. This process is both of fundamental interest and relevant for applications in future ultra-efficient photovoltaic devices. |
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| Publication date | 2009-09-11 |
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| Publisher | American Association for the Advancement of Science |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 23004848 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 88fa6943-fd8a-4d66-a443-827d11cc7bcf |
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| Record created | 2019-01-03 |
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| Record modified | 2020-04-16 |
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