| DOI | Resolve DOI: https://doi.org/10.1109/NUSOD52207.2021.9541432 |
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| Author | Search for: Walker, A. W.1; Search for: Pitts, O. J.1 |
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| Affiliation | - National Research Council Canada. Advanced Electronics and Photonics
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| Format | Text, Article |
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| Conference | 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), September 13-17, 2021, Turin, Italy |
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| Subject | avalanche photodetector; breakdown; numerical simulation; multiplication width; InP; InGaAs; simulation; avalanche photodiodes; predictive models; numerical simulation; throughput; numerical models; photoconductivity |
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| Abstract | Numerical simulation of the electric field distribution and photocurrent response of a planar InP/InGaAs avalanche photodiode is presented as a function of varying multiplication width. The Zn dopant diffusion front is obtained by numerically simulating the diffusion process. The simulation results indicate that while a local peak value of the electric field is observed near the device edge, it is not associated with a significant increase in the photocurrent response. |
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| Publication date | 2021-09-13 |
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| Publisher | IEEE |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 87fee882-91c6-4a8d-8dfd-89cf50eebd42 |
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| Record created | 2023-04-04 |
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| Record modified | 2023-04-04 |
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