Mid-IR light emitting diodes using InAs, InAs[1-y]P[x]Sb[y], and InAs[1-x-y]P[x]Sb[y] epilayers on InAs (100)
Mid-IR light emitting diodes using InAs, InAs[1-y]P[x]Sb[y], and InAs[1-x-y]P[x]Sb[y] epilayers on InAs (100)
| DOI | Resolve DOI: https://doi.org/10.1117/12.328742 |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: |
| Sponsor | Search for: SPIE |
| Format | Text, Article |
| Conference | Applications of photonic technology 3 : closing the gap between theory, development, and application : [proceedings of the 3rd International Conference on Applications of Photonic Technology (ICAPT '98)], July 27-30, 1998, Ottawa, Ontario, Canada |
| ISSN | 0277-786X |
| ISBN | 0819429503 |
| Language | English |
| NRC number | NRC-INMS-1099 |
| NPARC number | 8898630 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 87a4b283-9542-4397-acb3-35a7a2253a45 |
| Record created | 2009-04-22 |
| Record modified | 2020-04-16 |
- Date modified: