| DOI | Resolve DOI: https://doi.org/10.1017/S143192761500882X |
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| Author | Search for: Hayashida, Misa1; Search for: Gunawan, Lina; Search for: Malac, Marek1; Search for: Pawlowicz, Chris; Search for: Couillard, Martin2 |
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| Affiliation | - National Research Council of Canada. Nanotechnology
- National Research Council of Canada
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| Format | Text, Article |
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| Conference | Microscopy & Microanalysis 2015, August 2-6, 2015, Portland, Oregon, United States |
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| Abstract | As semiconductor industries have implemented three dimensional (3-D) structures in order to improve device performance, i.e., to decrease power requirement and to lower current leakage, a conventional 2-D TEM cross-section is no longer sufficient to visualize the structure of a device. Electron Tomography (ET) provides more comprehensive representation in comparison to conventional 2-D cross section TEM images. Electron tomography allows for object visualization of practical interest at sub-nm resolution in 3D. For undistorted rendering and accurate measurement of object dimensions the data must be acquired over the entire ±90° tilt range and the accuracy of the alignment of the projected images must be better than the desired resolution of the reconstructed volume [1]. Here we discuss high resolution ET investigation of semiconductor devices using nano-dot fiducial markers on samples without a missing wedge. |
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| Publication date | 2015-08-01 |
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| Publisher | Cambridge University Press |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 81f82cab-a0b4-47d7-8a42-684311aab471 |
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| Record created | 2020-01-21 |
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| Record modified | 2024-05-15 |
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