Zn diffusion depth effect on photoresponse uniformity in InP/InGaAs avalanche photodiodes

Par Conseil national de recherches du Canada

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DOIResolve DOI: https://doi.org/10.1007/s11082-022-03931-1
AuthorSearch for: 1ORCID identifier: https://orcid.org/0000-0002-1791-2140; Search for: 1; Search for: 1; Search for: 1
Affiliation
  1. National Research Council of Canada. Advanced Electronics and Photonics
FormatText, Article
Subjectavalanche photodetector; breakdown; InGaAs; InP; mask loading; multiplication width; numerical simulation; Zn diffusion
Abstract
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PublisherSpringer Nature
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In
LanguageEnglish
Peer reviewedYes
Identifier3931
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Record identifier80aef8dc-6a3b-48e3-8e39-fb5dda205d18
Record created2024-04-02
Record modified2024-04-02
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