| DOI | Resolve DOI: https://doi.org/10.1049/el:19951045 |
|---|
| Author | Search for: Fallahi, M.1; Search for: Dion, M.1; Search for: Wasilewski, Z.1; Search for: Buchanan, M.1; Search for: Nournia, M.1; Search for: Stapledon, J.1; Search for: Barber, R.1 |
|---|
| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
|
|---|
| Format | Text, Article |
|---|
| Subject | 17 mA; 170 mW; 980 nm; circular-grating type; distributed Bragg reflector; electron beam lithography; etch-stop layer; high efficiency operation; InGaAs-GaAs; low threshold current; MBE; MQW structure; strained triple quantum well; surface-emitting DBR lasers |
|---|
| Abstract | The authors demonstrate low threshold current high efficiency operation of circular-grating surface-emitting distributed Bragg reflector (CG-SE-DBR) lasers. A strained InGaAsIGaAs triple quantum well with an etch-stop layer was grown by MBE. Circular gratings are defined by electron beam lithography. A threshold current as low as 17 mA and a pulsed output power >170 mW at ~980 nm wavelength are obtained. |
|---|
| Publication date | 1995-08-31 |
|---|
| In | |
|---|
| Language | English |
|---|
| NPARC number | 12338028 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | 7f7098af-043a-4e59-9a65-900835666c97 |
|---|
| Record created | 2009-09-10 |
|---|
| Record modified | 2020-04-29 |
|---|
