Phonons in strained In1-xGaxAs/InP epilayers characterized by infrared refelectance
Phonons in strained In1-xGaxAs/InP epilayers characterized by infrared refelectance
| DOI | Resolve DOI: https://doi.org/10.1063/1.1940732 |
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| Author | Search for: ; Search for: ; Search for: 1; Search for: 1 |
| Affiliation |
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| Format | Text, Article |
| Publication date | 2005 |
| In | |
| Language | English |
| Peer reviewed | Yes |
| NPARC number | 8900510 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 7e1d52ac-4736-4299-95b3-be223665c360 |
| Record created | 2009-04-22 |
| Record modified | 2023-05-10 |
- Date modified: