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Coulomb blockade: poisson versus Pauli in a silicon quantum box

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1016/S0038-1101(99)00038-6
AuthorSearch for: ; Search for: ORCID identifier: https://orcid.org/0000-0002-9831-8273; Search for:
FormatText, Article
Abstract
We discuss the limitations of the orthodox Coulomb-blockade theory when applied to silicon quantum dots in the nanometer range and we present a simple Poisson–Schrödinger model to evaluate the quantum contribution in these cases. This contribution can be seen as a quantum capacitance in series with the sum of capacitance around the dot. This simple model gives results similar to a more sophisticated one which includes Pauli principle, with a precision of the order of room-temperature thermal–energy kT. Finally we show that the simple model can be easily included in micro-electronic simulators and therefore can be very effective to predict new properties of future quantum devices. All the effects discussed in this paper are room-temperature effects.
Publication date
PublisherElsevier
In
  • Solid-State Electronics 43, no. 6 (9 June 1999): 1147–1151.
LanguageEnglish
Peer reviewedYes
NRC publication
This is a non-NRC publication

"Non-NRC publications" are publications authored by NRC employees prior to their employment by NRC.

IdentifierS0038110199000386
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