| DOI | Resolve DOI: https://doi.org/10.1557/PROC-318-129 |
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| Author | Search for: Das, Suhit R.1; Search for: Xu, D-X.1; Search for: Phillips, J.1; Search for: McCaffrey, J.1; Search for: LeBrun, L.1; Search for: Naem, A. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 1993 MRS Fall Meeting, Symposium Ca: Interface Control of Electrical, Chemical, and Mechanical Properties, November 29 - December 3, 1993, Boston, Massachusetts, U.S.A. |
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| Abstract | PtSi/Si interfaces have been formed by depositing Pt layers on chemically cleaned, lightly doped, n-type Si (100) wafers in a UHV magnetron sputter-deposition system using ultra high purity Ar as the sputter gas, followed by ex-situ silicidation in N2 ambient utilizing a 3-step rapid thermal annealing (RTA) process. The polycrystalline PtSi layer, with oriented grains ranging in size from 50-100 nm, exhibits a columnar growth morphology. The PtSi/Si interface is planar with interface roughness in the order of 5 nm peak-to-peak. Auger depth profile shows uniform composition through the PtSi layer and a clean and chemically abrupt PtSi/Si interface. |
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| Publication date | 1993 |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21276804 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 7a06ff56-bb9e-44b7-a91d-2082550fee74 |
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| Record created | 2015-10-20 |
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| Record modified | 2020-04-24 |
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