|DOI||Resolve DOI: https://doi.org/10.1557/PROC-318-129|
|Author||Search for: Das, Suhit R.1; Search for: Xu, D-X.1; Search for: Phillips, J.1; Search for: McCaffrey, J.1; Search for: LeBrun, L.1; Search for: Naem, A.|
- National Research Council of Canada. NRC Institute for Microstructural Sciences
|Conference||1993 MRS Fall Meeting, Symposium Ca: Interface Control of Electrical, Chemical, and Mechanical Properties, November 29 - December 3, 1993, Boston, Massachusetts, U.S.A.|
PtSi/Si interfaces have been formed by depositing Pt layers on chemically cleaned, lightly doped, n-type Si (100) wafers in a UHV magnetron sputter-deposition system using ultra high purity Ar as the sputter gas, followed by ex-situ silicidation in N2 ambient utilizing a 3-step rapid thermal annealing (RTA) process. The polycrystalline PtSi layer, with oriented grains ranging in size from 50-100 nm, exhibits a columnar growth morphology. The PtSi/Si interface is planar with interface roughness in the order of 5 nm peak-to-peak. Auger depth profile shows uniform composition through the PtSi layer and a clean and chemically abrupt PtSi/Si interface.
|Export citation||Export as RIS|
|Report a correction||Report a correction (opens in a new tab)|