| DOI | Resolve DOI: https://doi.org/10.1557/PROC-399-413 |
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| Author | Search for: Lafontaine, H.1; Search for: Houghton, D.C.1; Search for: Bahierathan, B.; Search for: Perovic, D.D.; Search for: Baribeau, J.-M.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 1995 MRS Fall Meeting: Symposium D: Evolution of Epitaxial Structure and Morphology, November 27-December 1, 1995, Boston, Massachusetts, U.S.A. |
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| Abstract | Several Si1-xGex/Si heterostructures were grown at 525°C using a commercially available UHV-CVD reactor. Layers with a germanium fraction ranging from 0.15 to 0.5 were examined by means of cross-sectional transmission electron microscopy and atomic force microscopy. Surface waves were found in layers with a thickness above a critical value which decreases rapidly as the Ge fraction is increased. Both experimental and modeling results show that surface waves are generated before misfit dislocations for Ge fractions above 0.3. |
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| Publication date | 1996-07-02 |
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| Peer reviewed | Yes |
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| NPARC number | 12327236 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 76b224bc-090a-48fc-b90f-4d37e7ee82ea |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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