Determining strain, chemical composition, and thermal properties of Si/SiGe nanostructures via raman scattering spectroscopy

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DOI	Resolve DOI: https://doi.org/10.1149/osf.io/68puc
Author	Search for: Tsybeskov, L.; Search for: Mala, S. A.; Search for: Wang, X.; Search for: Baribeau, J.-M.¹; Search for: Wu, X.¹; Search for: Lockwood, D. J.²
Affiliation	National Research Council Canada. Advanced Electronics and Photonics National Research Council Canada. Measurement Science and Standards
Format	Text, Article
Physical description	15 p.
Abstract	Studies by Raman spectroscopy of two kinds of Si/SiGe nanostructures—quantum dot multilayers and planar superlattices—reveal a wide variety of spectral features including first- and second-order Raman scattering, polarized Raman scattering, and low-frequency inelastic light scattering associated with folded acoustic phonons. Here we overview how such features can be employed to semi-quantitatively analyze the strain, chemical composition, and thermal conductivity in these industrially important materials that are widely used for producing electronic and optoelectronic devices.
Publication date	2018-09
Publisher	ECSarXiv
In	ECSarXiv Preprints.
Language	English
Peer reviewed	No
NPARC number	23004216
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Record identifier	76071b9f-bc78-477a-9036-2852a33a9f28
Record created	2018-10-12
Record modified	2020-05-30