Language selection

Government of Canada / Gouvernement du Canada

Search

The Effect of IrO2-IrO2/Hf/LaAlO3 Gate Dielectric on the Bias-Temperature Instability of 3-D GOI CMOSFETs

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/LED.2005.848130
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: 1
Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • IEEE Electron Device Letters 26, no. 6 (2005): 407–409.
NPARC number12744299
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier75da39aa-8372-41b2-8155-25899244d286
Record created2009-10-27
Record modified2020-04-07
Date modified: