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Strong potential profile fluctuations and effective localization process in InGaN/GaN multiple quantum wells grown on {10-1m} faceted surface GaN template

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.2214211
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Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
  2. National Research Council Canada. NRC Industrial Materials Institute
FormatText, Article
Publication date
In
  • Journal of Applied Physics 100, no. 1, 013528 (2006).
LanguageEnglish
Peer reviewedYes
NPARC number12744362
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Record identifier75699883-fb09-4349-8b74-e461e7b25589
Record created2009-10-27
Record modified2023-04-17
Date modified: