| Abstract | Spintronic magnetic sensors with the integration of magnetic materials and microstructures have been enabling people to make use of the electron spin and charge properties in many applications. The high demand for such sensors has in turn spurred the technology developments in both novel materials and their atomic-level controls. Few works, however, have been carried out and reported thus far in modeling and simulation of these spintronic magnetic sensing units based on magnetic tunnel junction (MTJ) technology. Accordingly, this paper proposes a novel modeling approach as well as an iterative simulation methodology for MTJs. A more comprehensive electrical tunneling model is established for better interpreting the conductance and current generated by the electron tunneling, and this model can also facilitate the iterative simulation of the micromagnetic dynamics. Given the improved tunneling model as well as the updated dynamic simulation, the electric characteristics of an MTJ with an external magnetic field can be conveniently computed, which provides a reliable benchmark for the future development of novel spintronic magnetic sensors. |
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