| DOI | Resolve DOI: https://doi.org/10.1063/1.5023596 |
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| Author | Search for: Studenikin, S. A.1; Search for: Gaudreau, L.1; Search for: Kataoka, K.1; Search for: Austing, D. G.; Search for: Sachrajda, A. S.1 |
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| Affiliation | - National Research Council Canada. Security and Disruptive Technologies
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| Format | Text, Article |
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| Abstract | We demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication [Lu et al., Appl. Phys. Lett. 109, 093102 (2016)]. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ∼2% in the sensor current. |
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| Publication date | 2018-06-04 |
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| Publisher | AIP Publishing |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 23003613 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 6fd9454e-e9c0-4c71-81bd-7c717c079fe1 |
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| Record created | 2018-07-25 |
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| Record modified | 2020-03-16 |
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