| DOI | Resolve DOI: https://doi.org/10.1063/1.124442 |
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| Author | Search for: Dupont, E.1; Search for: Liu, H. C.1; Search for: Buchanan, M.1; Search for: Wasilewski, Z. R.1; Search for: St-Germain, D.; Search for: Chevrette, P. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | aluminium compounds; CCD image sensors; focal planes; gallium arsenide; III-V semiconductors; infrared detectors; infrared imaging; integrated optoelectronics; light emitting diodes; photoconductivity; photodetectors; quantum well devices; spontaneous emission |
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| Abstract | This letter presents the recent developments of large-area focal plane "pseudo" arrays for infrared (IR) imaging. The devices are based on the epitaxial integration of an n-type mid-IR (8–10 μm) GaAs/AlGaAs quantum-well detector with a light-emitting diode. The increase of spontaneous emission by the midinfrared-induced photocurrent is detected with a charge-coupled device camera in the reflection configuration. The mid-IR image of a blackbody object is up-converted to a near-IR transformed image with very small distortion. |
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| Publication date | 1999-06-01 |
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| In | |
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| Language | English |
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| NPARC number | 12327907 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 6c71bbcb-b581-4a36-bf3d-48e3db988a78 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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