| DOI | Resolve DOI: https://doi.org/10.1063/1.1314887 |
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| Author | Search for: Deen, M. Jamal; Search for: Rumyantsev, S. L.; Search for: Landheer, D.1; Search for: Xu, D.-X.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | Low-frequency noise in cadmium-selenide (CdSe) thin-film transistors (TFTs) has been studied over a wide range of gate and drain biases, temperatures, and gate areas. The dependencies of the noise on the gate voltage and the gate length indicate that the 1/f noise originates from the bulk sources homogeneously distributed in the channel. The value of Hooge parameter α lies within the usual range 10−3<α<2×10−2 for Si TFTs and amorphous Si. |
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| Publication date | 2000 |
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| In | |
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| Language | English |
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| NPARC number | 12744245 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 6bbf480b-e0c1-4486-9851-a6830cfa613c |
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| Record created | 2009-10-27 |
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| Record modified | 2020-03-26 |
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