| DOI | Resolve DOI: https://doi.org/10.1007/s00339-009-5111-8 |
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| Author | Search for: Tsybeskov, L.; Search for: Lee, E.-K.; Search for: Chang, H.-Y.; Search for: Lockwood, D. J.1; Search for: Baribeau, J.-M.1; Search for: Wu, X.1; Search for: Kamins, T. I. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | Silicon–germanium epitaxially grown on silicon in the form of two-dimensional (quantum wells) and threedimensional (quantum dots) nanostructures exhibits photoluminescence and electroluminescence in the technologically important spectral range of 1.3–1.6 μm. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency, and a long carrier radiative lifetime. This paper summarizes recent progress in the understanding of carrier recombination in Si/SiGe nanostructures and presents a potential new route toward CMOS compatible light emitters for on-chip optical interconnects. |
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| Publication date | 2009 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21276870 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 69d56737-297f-40d1-86b3-6e3c3aa1e07b |
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| Record created | 2015-10-27 |
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| Record modified | 2020-04-16 |
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