Well-resolved band-edge photoluminescence from strained Si[1-x]Ge[x] layers grown by rapid thermal chemical vapor deposition

Author	Search for: Sturm, J. C.; Search for: Schwartz, P. V.; Search for: Manoharan, H.; Search for: Mi, Q.; Search for: Lenchyshyn, L. C.; Search for: Thewalt, M. L.W.; Search for: Rowell, N. L.; Search for: Noël, J. P.; Search for: Houghton, D. C.
Sponsor	Search for: MRS
Format	Text, Article
Conference	Silicon molecular beam epitaxy : symposium, April 29-May 3, 1991, Anaheim, California, USA
ISSN	0272-9172
ISBN	155899114X
Language	English
NRC number	NRC-INMS-1199
NPARC number	8900718
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Record identifier	69cd13db-046a-4d89-85cc-b8f1fab6cee6
Record created	2009-04-22
Record modified	2020-04-16