| DOI | Resolve DOI: https://doi.org/10.1117/12.573063 |
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| Author | Search for: Baribeau, J.-M.1; Search for: Rowell, N. L.2; Search for: Lockwood, D. J.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
- National Research Council of Canada. NRC Institute for National Measurement Standards
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| Sponsor | Search for: SPIE |
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| Format | Text, Article |
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| Conference | Quantum sensing and nanophotonic devices II, 23-27 January 2005, San Jose, California, USA |
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| Abstract | We review recent progress in the growth and characterization of Si1-xGex islands and Ge dots on (001) Si. We discuss the evolution of the island morphology with Si1-xGex coverage, and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural, and optical properties of Si1-xGex islands and review recent progress in the determination of their composition and strain distribution. We describe the use of undulated Si1-xGex islands superlattices for infrared detection at telecommunication wavelengths. We discuss various approaches currently being investigated to engineer Si1-xGex quantum dots and in particular control their size, density and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence nucleation and growth of Ge islands. We also show how low temperature Si homoepitaxy can lead to a particular surface cusp morphology that may promote dot nucleation. |
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| Publication date | 2005 |
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| In | |
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| Language | English |
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| NRC number | NRC-INMS-1390 |
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| NPARC number | 8900389 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 69519e69-8a25-4907-aaac-c2acf2471e99 |
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| Record created | 2009-04-22 |
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| Record modified | 2020-04-07 |
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