| DOI | Resolve DOI: https://doi.org/10.1134/1.1577763 |
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| Author | Search for: Studenikin, S. A.1; Search for: Coleridge, P. T.1; Search for: Poole, Philip1; Search for: Sachrajda, Andrew1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | There is currently a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We report results of a study of spin-orbit effects in a strained InGaAs/InP quantum well. The spin-orbit relaxation time, determined from the weak antilocalization effect, was found to depend nonmonotonically on gate voltage. The spin-orbit scattering rate had a maximum value of 5×1010 s−1 at an electron density of n=3×1015 m−2. The scattering rate decreased from this for both increasing and decreasing densities. The smallest measured value was approximately 109 s−1 at an electron concentration of n=6×1015 m−2. This behavior could not be explained by either the Rashba or the bulk Dresselhaus mechanisms but is attributed to asymmetry or strain effects at dissimilar quantum well interfaces. |
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| Publication date | 2003 |
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| In | |
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| NPARC number | 12744577 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 646ee749-de71-4f35-8c62-8bbcfd2ecbc4 |
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| Record created | 2009-10-27 |
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| Record modified | 2020-04-02 |
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