| DOI | Resolve DOI: https://doi.org/10.1016/0921-4526(96)00447-4 |
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| Author | Search for: Wang, P. D.; Search for: Merz, J. L.; Search for: Fafard, S.; Search for: Leon, R.; Search for: Leonard, D.; Search for: Medeiros-Ribeiro, G.; Search for: Oestreich, M.; Search for: Petroff, P. M.; Search for: Ledentsov, N. N.; Search for: Kop'ev, P. S.; Search for: Ustinov, V. M.; Search for: Uchida, K.; Search for: Miura, N.; Search for: Ariyama, H.; Search for: Sakaki, H.; Search for: Sotomayor Torres, C. M. |
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| Format | Text, Article |
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| Subject | Self-assembled quantum dots; InAs---GaAs; InAlAs---AlGaAs |
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| Abstract | We present magneto-optical studies of both InAs monolayers and InAlAs self-assembled quantum dots grown by molecular beam epitaxy. In both structures, strong exciton binding energy was measured. In the case of InAs monolayers in (3 1 1) GaAs matrices, the strong exciton binding energy (12 ± 1 MeV) is caused by the lateral quantum confinement. In the case of InAlAs self-assembled quantum dots, 3D complete quantum confinement is achieved. The excitonic properties of self-assembled quantum dots are discussed. |
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| Publication date | 1996-09 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12338952 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 644af2bb-0816-4bc1-8f0a-2fcdcb94f4a1 |
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| Record created | 2009-09-11 |
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| Record modified | 2020-03-20 |
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