| DOI | Resolve DOI: https://doi.org/10.1063/1.371814 |
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| Author | Search for: Dupont, Emmanuel1; Search for: Liu, H.; Search for: Yang, Rui |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | electroluminescence; gallium compounds; III-V semiconductors; indium compounds; k.p calculations; light emitting diodes; light polarisation; quantum well devices |
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| Abstract | We report an experimental investigation of polarization dependence of mid-infrared electroluminescence from type-II InAs/GaInSb interband cascade devices. The in-plane polarized emission was found to be dominant from a laser structure, supporting the assertion based on the conventional k�p theory. The observed electroluminescences from the light-emitting diodes were found to be nearly independent of polarization. These experimental results have been discussed along with theoretical calculations based the conventional k�p theory. |
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| Publication date | 1999-12-15 |
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| In | |
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| NPARC number | 12333712 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 643b0fb5-0129-42f6-b1f7-6e36ade51605 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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