| DOI | Resolve DOI: https://doi.org/10.1088/1361-6641/abecab |
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| Author | Search for: Jiang, Weihong1ORCID identifier: https://orcid.org/0000-0002-7821-3837; Search for: Tang, Haipeng1; Search for: Bardwell, Jennifer A1 |
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| Affiliation | - National Research Council Canada. Advanced Electronics and Photonics
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| Format | Text, Article |
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| Subject | normally-off; gallium nitride; HEMT; power electronics; MBE regrowth |
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| Abstract | In this paper, we report the fabrication of a normally-off AlGaN/GaN high electron mobility transistor (HEMT) using an ultra-thin AlGaN barrier layer structure on Si (111) substrate. Additional AlGaN layers were selectively regrown only on the ohmic contact areas. The fabricated device exhibits a positive threshold voltage of 0.3 V, a maximum drain output current of 753 mA mm⁻¹ at gate voltage of +4 V, and low gate leakage of 1.2 × 10⁻⁷ A mm⁻¹. The selective area growth method shows a promising way to achieve normally-off GaN based HEMTs with very good performance. |
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| Publication date | 2021-03-26 |
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| Publisher | IOP |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 604823cd-6a76-4b6d-b44c-94c6ce8af53a |
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| Record created | 2023-02-21 |
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| Record modified | 2023-02-21 |
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