Contactless electroreflectance of GaN0.025As0.975-xSbx/GaAs quantum wells with high Sb content (0.27 <= x <= 0.33): the determination of band gap discontinuity
Contactless electroreflectance of GaN0.025As0.975-xSbx/GaAs quantum wells with high Sb content (0.27 <= x <= 0.33): the determination of band gap discontinuity
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DOI | Resolve DOI: https://doi.org/10.1063/1.2370506 |
Author | Search for: Kudrawiec, R.; Search for: Gupta, J. A.1; Search for: Wu, X.1 |
Name affiliation |
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Format | Text, Article |
Journal title | Applied physics letters |
ISSN | 0003-6951 |
Volume | 89 |
Article number | 171914 |
Abstract | |
Publication date | 2006 |
Language | English |
Peer reviewed | Yes |
NPARC number | 21276876 |
Export citation | Export as RIS |
Report a correction | Report a correction |
Record identifier | 53e70342-b7f1-4f93-ab24-d8c3daa480a6 |
Record created | 2015-10-29 |
Record modified | 2020-06-04 |