Contactless electroreflectance of GaN0.025As0.975-xSbx/GaAs quantum wells with high Sb content (0.27 <= x <= 0.33): the determination of band gap discontinuity

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DOI	Resolve DOI: https://doi.org/10.1063/1.2370506
Author	Search for: Kudrawiec, R.; Search for: Gupta, J. A.¹; Search for: Wu, X.¹
Name affiliation	National Research Council of Canada. NRC Institute for Microstructural Sciences
Format	Text, Article
Journal title	Applied physics letters
ISSN	0003-6951
Volume	89
Article number	171914
Abstract	GaN0.025As0.975−xSbx /GaAs quantum wells QWs with x=0.27 and x=0.33 were investigated by contactless electroreflectance CER spectroscopy. CER features related to optical transitions between the ground and excited states were clearly observed, indicating that these QWs have type-I structures. By matching the QW transition energies with those obtained from theoretical calculations performed within the electron effective mass approximation the conduction band offset in these QWs is found to be close to 40%. The resulting conduction band discontinuities were found to be ~200 and ~150 meV for the QWs with x=0.27 and x=0.33, respectively.
Publication date	2006
Language	English
Peer reviewed	Yes
NPARC number	21276876
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Record identifier	53e70342-b7f1-4f93-ab24-d8c3daa480a6
Record created	2015-10-29
Record modified	2020-06-04