| Download | - View accepted manuscript: Contactless electroreflectance of GaN0.025As0.975-xSbx/GaAs quantum wells with high Sb content (0.27 <= x <= 0.33): the determination of band gap discontinuity (PDF, 695 KB)
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| DOI | Resolve DOI: https://doi.org/10.1063/1.2370506 |
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| Author | Search for: Kudrawiec, R.; Search for: Gupta, J. A.1; Search for: Wu, X.1 |
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| Name affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | GaN0.025As0.975−xSbx /GaAs quantum wells QWs with x=0.27 and x=0.33 were investigated by contactless electroreflectance CER spectroscopy. CER features related to optical transitions between the ground and excited states were clearly observed, indicating that these QWs have type-I structures. By matching the QW transition energies with those obtained from theoretical calculations performed within the electron effective mass approximation the conduction band offset in these QWs is found to be close to 40%. The resulting conduction band discontinuities were found to be ~200 and ~150 meV for the QWs with x=0.27 and x=0.33, respectively. |
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| Publication date | 2006 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21276876 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction |
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| Record identifier | 53e70342-b7f1-4f93-ab24-d8c3daa480a6 |
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| Record created | 2015-10-29 |
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| Record modified | 2020-06-04 |
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