| DOI | Resolve DOI: https://doi.org/10.1063/1.104454 |
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| Author | Search for: Rowell, N. L.1; Search for: Noël, J. P.1; Search for: Houghton, D. C.1; Search for: Buchanan, M.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | Electroluminescence has been observed from Si1−xGex/Si p-n heterostructures grown by molecular beam epitaxy and fabricated into mesa diodes. The luminescence from each sample was observed at temperatures up to 80 K with diodes forward biased at current densities up to 50 A/cm2. For x=0.18 and x=0.25, broad (∼80 meV) electroluminescence peaks were observed at 890 and 860 meV, respectively. These energies as well as the peak shapes and quantum efficiencies (∼1%) were the same as those from corresponding photoluminescence spectra. |
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| Publication date | 1991-03-04 |
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| In | |
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| Language | English |
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| NRC number | NRC-INMS-1128 |
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| NPARC number | 8897158 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 533d3cb7-cd4e-4fc5-a752-c44e9edfe1e9 |
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| Record created | 2009-04-22 |
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| Record modified | 2020-03-17 |
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