| DOI | Resolve DOI: https://doi.org/10.3791/56861 |
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| Author | Search for: Rashidi, Mohammad1; Search for: Vine, Wyatt1; Search for: Burgess, Jacob A.J.1; Search for: Taucer, Marco; Search for: Achal, Roshan1; Search for: Pitters, Jason L.1; Search for: Loth, Sebastian; Search for: Wolkow, Robert A.1 |
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| Affiliation | - National Research Council Canada. Nanotechnology
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| Format | Text, Article |
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| Abstract | The miniaturization of semiconductor devices to scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution, which motivates the use of scanning tunneling microscopy (STM). However, conventional STM is limited to millisecond temporal resolution. Several methods have been developed to overcome this shortcoming, including all-electronic time-resolved STM, which is used in this study to examine dopant dynamics in silicon with nanosecond resolution. The methods presented here are widely accessible and allow for local measurement of a wide variety of dynamics at the atomic scale. A novel time-resolved scanning tunneling spectroscopy technique is presented and used to efficiently search for dynamics. |
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| Publication date | 2018-01-19 |
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| Publisher | Journal of Visualized Experiments |
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| In | |
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| Other format | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 23003528 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 4e2a3d2c-bd7f-4607-94c3-56d941eb9058 |
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| Record created | 2018-07-17 |
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| Record modified | 2020-03-16 |
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