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An electrically pumped surface-emitting semiconductor green laser

From National Research Council Canada

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DOIResolve DOI: https://doi.org/10.1126/sciadv.aav7523
AuthorSearch for: ORCID identifier: https://orcid.org/0000-0002-3303-136X; Search for: ORCID identifier: https://orcid.org/0000-0002-0170-0442; Search for: ; Search for: 1ORCID identifier: https://orcid.org/0000-0003-3129-6644; Search for: ; Search for: ORCID identifier: https://orcid.org/0000-0001-9494-7390
Affiliation
  1. National Research Council Canada. Advanced Electronics and Photonics
FormatText, Article
Abstract
Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and augmented reality glasses. Here, we report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)–free electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs. The device operates at ~523 nm and exhibits a threshold current of ~400 A/cm², which is over one order of magnitude lower compared to previously reported blue laser diodes. Our studies open a new paradigm for developing low-threshold surface-emitting laser diodes from the ultraviolet to the deep visible (~200 to 600 nm), wherein the device performance is no longer limited by the lack of high-quality DBRs, large lattice mismatch, and substrate availability.
Publication date
PublisherAmerican Association for the Advancement of Science
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  • Science Advances 6, no. 1, eaav7523 (1 January 2020): 1–8.
LanguageEnglish
Peer reviewedYes
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Record identifier49612c15-feee-4abd-95a4-fa4c729c5b95
Record created2020-06-23
Record modified2020-06-26
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