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Ammonia molecular beam epitaxy growth of p-type GaN and application for bipolar junction transistors

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1116/1.1926307
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Publication date
In
  • Journal of Vacuum Science & Technology B 23, no. 3 (2005): 1199–1203.
NPARC number12743977
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Record identifier4796c023-9c1f-4c46-a6da-9a777e058df5
Record created2009-10-27
Record modified2020-04-07
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