| DOI | Resolve DOI: https://doi.org/10.1109/68.334811 |
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| Author | Search for: Fallahi, M.1; Search for: Dion, M.2; Search for: Chatenoud, F.1; Search for: Templeton, I. M.1; Search for: Barber, R.1; Search for: Sedivy, J. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
- National Research Council Canada
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| Format | Text, Article |
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| Subject | 26 mA; 977 nm; circular-grating surface-emitting DBR lasers; CW operation; CW threshold current; diffraction gratings; gallium arsenide; III-V semiconductors; indium compounds; InGaAs/GaAs strained multiquantum-well; InGaAs-GaAs; lasing wavelength; low threshold CW operation; material system; modified fabrication process; MQW; optical fabrication; quantum well lasers; room temperature continuous wave operation; self-aligned process; surface emitting lasers |
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| Abstract | In this letter, we present the first room temperature continuous wave operation of circular-grating surface-emitting DBR lasers. The structure is an InGaAs/GaAs strained multiquantum-well. A modified fabrication process with a better control on the steps is used. A CW threshold current as low as 26 mA at a lasing wavelength of about 977 mm are reported. This is the first demonstration of CW operation for these lasers in any material system |
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| Publication date | 1994 |
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| In | |
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| Language | English |
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| NPARC number | 12327511 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 45ddce8d-f55e-40be-a2b8-b8d33efd1873 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-27 |
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