| DOI | Resolve DOI: https://doi.org/10.1063/1.4937223 |
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| Author | Search for: Lefebvre, J.1; Search for: Ding, J.1; Search for: Li, Z.1; Search for: Cheng, F.1; Search for: Du, N.1; Search for: Malenfant, P. R. L.1 |
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| Affiliation | - National Research Council of Canada
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| Format | Text, Article |
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| Subject | Dielectric materials; Hydrophobicity; Hysteresis; Nanotubes; Single-walled carbon nanotubes (SWCN); Thin film transistors; Thin films; Threshold elements; Threshold voltage; Transistors; Device encapsulations; Dielectric stress; Hole conduction; Hysteresis free; Methyl silsesquioxanes; Polyvinylphenol; Threshold gate voltage; Carbon nanotubes |
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| Abstract | We present two examples of carbon nanotube network thin film transistors with strongly hydrophobic dielectrics comprising either Teflon-AF or a poly(vinylphenol)/poly(methyl silsesquioxane) (PVP/pMSSQ) blend. In the absence of encapsulation, bottom gated transistors in air ambient show no hysteresis between forward and reverse gate sweep direction. Device threshold gate voltage and On-current present excellent time dependent stability even under dielectric stress. Furthermore, threshold gate voltage for hole conduction is negative upon device encapsulation with PVP/pMSSQ enabling much improved current On/Off ratio at 0 V. This work addresses two major challenges impeding solution based fabrication of relevant thin film transistors with printable single-walled carbon nanotube channels. |
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| Publication date | 2015-12-14 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21277404 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 44d4a5d8-ce21-4260-9dca-394e940bc72e |
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| Record created | 2016-03-09 |
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| Record modified | 2020-04-22 |
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