The characterization of oxides formed on InP,InGaAs,InAlAs and InGaAs/InAlAs heterostructures at 300-500ºC
The characterization of oxides formed on InP,InGaAs,InAlAs and InGaAs/InAlAs heterostructures at 300-500ºC
| DOI | Resolve DOI: https://doi.org/10.1023/A:1015396204143 |
|---|---|
| Author | Search for: ; Search for: 1; Search for: 2; Search for: 1 |
| Affiliation |
|
| Format | Text, Article |
| Publication date | 2002 |
| In | |
| NPARC number | 12744875 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 44c7b966-b576-471f-82d9-9600c111de7f |
| Record created | 2009-10-27 |
| Record modified | 2020-03-30 |
- Date modified: