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The effect of surface cleaning on current collapse in AlGaN/GaN HEMTs

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1149/1.2357227
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Conference210th ECS Meeting, 29 October-3 November 2006, Cancun, Mexico
Abstract
The phenomenon of current collapse is a limiting factor in the performance of AlGaN/GaN high electron mobility transistors (HEMTs), and can be ameliorated by the deposition of a silicon nitride passivation film on the surface. The effect of three types of surface cleaning prior to the application of a silicon nitride passivation layer are studied. The best results were obtained when the wafers were cleaned using an air plasma descum followed by an HCl dip prior to the deposition of the silicon nitride passivation. Auger electron spectroscopy depth profiling indicated that the degree of collapse was correlated with the amount of residual carbon contamination at the silicon nitride/AlGaN interface.
Publication date
In
  • State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 (2006): 373–379.
Series
  • ECS Transactions 3, no. 5: 373–379.
LanguageEnglish
NPARC number12346762
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Record identifier4236f1b5-c953-4b12-8a8b-93336e5d1f3b
Record created2009-09-17
Record modified2020-04-22
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