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Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.112060
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FormatText, Article
SubjectENERGY LEVELS; ENERGYLEVEL DENSITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; NANOSTRUCTURES; PHOTOLUMINESCENCE; QUANTUM DOTS; SIZE EFFECT
Abstract
The energy levels of nanometer size InGaAs quantum dots epitaxially grown on GaAs by the coherent islanding effect are probed using selectively excited photoluminescence (PL), and PL excitation. A lateral-confinement-induced interlevel spacing of ~30 meV between the first two states can be deduced from the spectra.
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  • Applied Physics Letters 65, no. 11 (1994): 1388–1390.
LanguageEnglish
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NPARC number12327613
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Record identifier40910852-4f63-4335-a834-6c96fcd7a385
Record created2009-09-10
Record modified2020-04-27
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