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Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with silicon microelectronics

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1016/j.jcrysgro.2008.10.105
AuthorSearch for: 1; Search for: 1; Search for: 1; Search for: 1; Search for: 1
Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • Jourmal of Crystal Growth 311, no. 7 (2009): 2087–2090.
LanguageEnglish
Peer reviewedYes
NPARC number12441146
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Record identifier3fd383c6-8392-4040-9a15-9350c4bf4e2f
Record created2009-09-25
Record modified2023-04-19
Date modified: