Radiation hardness of AlGaAs n-i-p solar cells with higher bandgap intrinsic region

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1016/j.solmat.2017.04.034
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  1. National Research Council of Canada. Information and Communication Technologies
FormatText, Article
SubjectAlGaAs; n-i-p solar cell; radiation hardness; end-of-life; diffusion length; device modeling
Publication date
Peer reviewedYes
NPARC number23002159
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Record identifier3f2effdc-28d3-496f-afde-40ce9fac9de8
Record created2017-08-28
Record modified2020-03-16
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