| DOI | Resolve DOI: https://doi.org/10.1002/1521-3862(200101)7:1<28::AID-CVDE28>3.0.CO;2-6 |
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| Author | Search for: Hsu, P.-F.; Search for: Chi, Y.; Search for: Lin, T.-W.; Search for: Liu, C.-S.; Search for: Carty, A. J.1; Search for: Peng, S.-M. |
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| Affiliation | - National Research Council Canada. NRC Steacie Institute for Molecular Sciences
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| Format | Text, Article |
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| Subject | Aminoalkoxide precursors; Copper; CVD |
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| Abstract | High purity copper metal is deposited from highly volatile copper complexes at temperatures near 250 °C. SEM shows a dense microstructure and relatively small grain size (see Figure), with one of the complexes producing copper with a measured electrical resistivity of 3.4 μΩ cm, very close to the physical resistivity value of bulk copper and copper with a purity of over 99 %. |
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| Publication date | 2001 |
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| In | |
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| Language | English |
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| NPARC number | 12339077 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 3f10e1d3-4c32-4915-8a3f-2623a29bc07e |
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| Record created | 2009-09-11 |
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| Record modified | 2020-03-27 |
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