Effect of growth temperature on photoluminescence from ion-beam-doped molecular beam epitaxial Si:As
Effect of growth temperature on photoluminescence from ion-beam-doped molecular beam epitaxial Si:As
| DOI | Resolve DOI: https://doi.org/10.1016/0040-6090(90)90399-X |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 1990 |
| In | |
| Language | English |
| NRC number | NRC-INMS-1117 |
| NPARC number | 8897009 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 38544757-f9ff-4643-92d0-fbe43bcbebb2 |
| Record created | 2009-04-22 |
| Record modified | 2020-03-17 |
- Date modified: