The effects of zinc-doping on the composition of InGaAsP layers grown by MOCVD

From National Research Council Canada

DOIResolve DOI: http://doi.org/10.1016/j.jcrysgro.2016.04.053
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Name affiliation
  1. National Research Council Canada
  2. National Research Council Canada. Information and Communication Technologies
TypeArticle
Journal titleJournal of Crystal Growth
ISSN0022-0248
Volume445
Pages110114
SubjectDoping; X-ray diffraction; Metalorganic chemical vapour deposition; Semiconducting quaternary alloys
Abstract
Publication date
PublisherElsevier
LanguageEnglish
Peer reviewedYes
IdentifierS0022024816301993
NPARC number23000326
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Record identifier37cc6350-bebd-42e5-a197-e67b151d26ec
Record created2016-07-07
Record modified2016-07-07
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