Reducing AC Power Consumption by Three-Dimensional Integration of Ge-On-Insulator CMOS on 1-Poly-6-Metal 0.18 um Si MOSFETs
Reducing AC Power Consumption by Three-Dimensional Integration of Ge-On-Insulator CMOS on 1-Poly-6-Metal 0.18 um Si MOSFETs
| DOI | Resolve DOI: https://doi.org/10.1149/1.1949088 |
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| Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: 1 |
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| Format | Text, Article |
| Publication date | 2005 |
| In | |
| NPARC number | 12744472 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 36f3a542-3377-4b59-bbe0-9150078850fa |
| Record created | 2009-10-27 |
| Record modified | 2020-04-07 |
- Date modified: