National Research Council of Canada. Information and Communication Technologies
31st International Conference on the Physics of Semiconductors 2012, 29 July–3 August 2012, Zurich, Switzerland
Magnetic fields; Polarization; Quantum dot devices; Leakage currents; High voltage; Direct current transmission
We outline the properties of the hyperfine-induced funnel structure observed in the two-electron spin blockade region of a weakly coupled vertical double quantum dot device. Hysteretic steps in the leakage current occur due to dynamic nuclear polarization when either the bias voltage or the magnetic field is swept up and down. When the bias voltage is swept, an intriguing ∼3 mT wide cusp near 0 T appears in the down-sweep position, and when the magnetic field is swept, the current at 0 T can be switched from "low" to "high" as the bias is increased.
The Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors: 205–206.