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Atomic defects of the hydrogen-terminated silicon surface imaged with nc-AFM

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FormatText, Abstract
ConferenceAPS March Meeting 2020, March 2-6, 2020, Denver, Colorado
Physical description1 p.
Abstract
The hydrogen-terminated silicon (H:Si) surface has been shown to be a viable candidate for the development of atom-scale devices; however, the creation of such devices is currently limited by the need for constant user-guided interaction during the fabrication process. Attempts to automate fabrication using deep learning successfully demonstrated the training of a neural network which was able to identify common defects. Building upon these recent works we present our efforts at creating a comprehensive catalog containing many of the commonly found defects of the H:Si-100(2x1) surface. By imaging the defects using different imaging parameters in STM and two different tip contrasts in non-contact AFM, we determine the structures of the defects, their likely origins and potential removal, and a path to improved accuracy for their automated detection. A deeper understanding will enable the creation of better defect-free samples for atomic fabrication.
Publication date
PublisherAmerican Physical Society
In
  • Bulletin of the American Physical Society 65, no. 1, Abstract: A52.00007.
LanguageEnglish
Peer reviewedYes
NRC publication
This is a non-NRC publication

"Non-NRC publications" are publications authored by NRC employees prior to their employment by NRC.

NRC numberNRC-NANO-066
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Record identifier3402e425-09f7-4dc5-9df5-ccf7bc78f762
Record created2021-02-04
Record modified2021-02-12
Date modified: