| DOI | Resolve DOI: https://doi.org/10.1109/ISCS.2000.947172 |
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| Author | Search for: Fafard, S.1; Search for: Allen, C. N.1; Search for: McCaffrey, J. P.1; Search for: Finnie, P.1; Search for: Fraser, J.1; Search for: Wasilewski, Z. R.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 2000 IEEE International Symposium on Compound Semiconductors, 2-5 October 2000, Monterey, California, USA |
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| Abstract | Self-assembled quantum dots (QDs) capped with less than ~10 nm display optical memory effects lasting over a time-scale of several minutes. The interaction and charge transfer between zero-dimensional states and surface states are studied using near-surface QD ensembles with well-defined electronic shells. The influence of the temperature and cap thickness have been investigated. The inhomogeneous broadening of self-assembled InAs/GaAs QDs increases from ~30 meV to more than ~46 meV as the distance of the QDs from the surface is changed from 100 nm to 5.0 nm. Simultaneously, a decrease of the radiative recombination intensity by ~3 orders of magnitude, and a red-shift of ~65 meV are observed |
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| Publication date | 2000 |
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| In | |
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| Language | English |
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| NPARC number | 12346788 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 34028883-4d2e-45ad-8d05-408d04edfec7 |
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| Record created | 2009-09-17 |
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| Record modified | 2020-03-26 |
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