Photoluminescence of boron-doped Si[1-x]Ge[x] epilayers grown by UHV-CVD
Photoluminescence of boron-doped Si[1-x]Ge[x] epilayers grown by UHV-CVD
DOI | Resolve DOI: https://doi.org/10.1016/S0921-5107(01)00820-0 |
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Author | Search for: Rowell, N. L.; Search for: Lafontaine, H. .; Search for: Dion, M. |
Format | Text, Article |
Journal title | Materials Science and Engineering. B |
ISSN | 0921-5107 |
Volume | 89 |
Issue | February 14 |
Pages | 141–145 |
Publication date | 2002-02-14 |
Language | English |
Identifier | 10442881 |
NRC number | NRC-INMS-372 |
NPARC number | 5764055 |
Export citation | Export as RIS |
Report a correction | Report a correction | Record identifier | 334b6a4f-51d2-46fe-b218-2d5044b019e4 |
Record created | 2009-03-29 |
Record modified | 2020-03-30 |