Photoluminescence of boron-doped Si[1-x]Ge[x] epilayers grown by UHV-CVD

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1016/S0921-5107(01)00820-0
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FormatText
TypeArticle
Journal titleMaterials science and engineering. B
ISSN0921-5107
Volume89
IssueFebruary 14,
Pages141145; # of pages: 5
Publication date
LanguageEnglish
Identifier10442881
NRC number372
NPARC number5764055
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Record identifier334b6a4f-51d2-46fe-b218-2d5044b019e4
Record created2009-03-29
Record modified2019-02-18
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