Photoluminescence of boron-doped Si[1-x]Ge[x] epilayers grown by UHV-CVD
Photoluminescence of boron-doped Si[1-x]Ge[x] epilayers grown by UHV-CVD
| DOI | Resolve DOI: https://doi.org/10.1016/S0921-5107(01)00820-0 |
|---|---|
| Author | Search for: Rowell, N. L.; Search for: Lafontaine, H. .; Search for: Dion, M. |
| Format | Text |
| Type | Article |
| Journal title | Materials science and engineering. B |
| ISSN | 0921-5107 |
| Volume | 89 |
| Issue | February 14, |
| Pages | 141–145; # of pages: 5 |
| Publication date | 2002 |
| Language | English |
| Identifier | 10442881 |
| NRC number | 372 |
| NPARC number | 5764055 |
| Export citation | Export as RIS |
| Report a correction | Report a correction | Record identifier | 334b6a4f-51d2-46fe-b218-2d5044b019e4 |
| Record created | 2009-03-29 |
| Record modified | 2019-02-18 |