| DOI | Resolve DOI: https://doi.org/10.1109/ESSDERC59256.2023.10268545 |
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| Author | Search for: Kizilkan, E.; Search for: Karaca, U.; Search for: Pešić, V.; Search for: Lee, M.-J.; Search for: Bruschini, C.; Search for: SpringThorpe, A. J.1; Search for: Walker, A. W.2ORCID identifier: https://orcid.org/0000-0002-1791-2140; Search for: Flueraru, C.2; Search for: Pitts, O. J.2ORCID identifier: https://orcid.org/0000-0002-5740-9443; Search for: Charbon, E. |
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| Affiliation | - National Research Council of Canada. Canadian Photonics Fabrication Centre
- National Research Council of Canada. Quantum and Nanotechnologies
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| Format | Text, Article |
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| Conference | ESSDERC 2023: IEEE 53rd European Solid-State Device Research Conference (ESSDERC), September 11-14, 2023, Lisbon, Portugal |
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| Subject | temperature measurement; performance evaluation; temperature distribution; wavelength measurement; current measurement; computational modeling; simulation |
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| Abstract | We present a simulation method to estimate the dark count rate (DCR), photon detection probability (PDP), and dark current of InGaAs/InP single-photon avalanche diodes (SPADs) from 225K to 300K. All simulations are performed completely in TCAD and match well with the measurement results of our novel selective area growth (SAG) based InGaAs/InP SPAD. An optimized simulation environment has the potential of estimating the device performance without costly fabrication iterations. Hence, it will accelerate the development of high-performance InGaAs/InP SPADs. |
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| Publication date | 2023-09-11 |
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| Publisher | IEEE |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 32305561-ec48-4d59-ba72-2510b79db1bc |
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| Record created | 2024-07-19 |
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| Record modified | 2024-07-19 |
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