| DOI | Resolve DOI: https://doi.org/10.1063/1.363393 |
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| Author | Search for: Xia, H.; Search for: Lennard, W.; Search for: Huang, L.; Search for: Lau, Wai-Hung1; Search for: Baribeau, J-M; Search for: Landheer, Dolf2 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Ocean Technology
- National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | depth profiles; diffusion; gallium arsenides; impurities; interfaces; photoemission; RBS; silicon; sulfur; X-ray absorption analysis |
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| Abstract | The depth distribution of sulphur near the Si/GaAs(110) interface has been measured using particle induced x-ray emission (PIXE) in conjunction with Rutherford backscattering spectrometry (RBS); ozone oxidation and a hydrofluoric acid step-etching technique were used for sequential removal of Si/GaAs atomic layers. The depth resolution was also calibrated via 16O(d,p)17O nuclear reaction analysis and x-ray photoemission spectroscopy. PIXE/RBS measurements found a half monolayer of sulphur on the H2Sx passivated GaAs(110) surface. Upon deposition of 15 � silicon on the S-passivated GaAs(110), the total amount of sulphur remained constant as compared to that before Si deposition. However, no orientated S�Ga bonds were detected via the x-ray absorption measurement and the depth profile revealed that the sulphur atoms diffused into both the GaAs substrate and the Si heterolayer. |
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| Publication date | 1996-10-15 |
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| In | |
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| NPARC number | 12338353 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 318ed558-e4ae-4502-ad0a-18fa028e44c7 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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