| Link | http://www.osti.gov/bridge/servlets/purl/150956-RNBDfn/webviewable/ |
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| Author | Search for: Schmuki, P.; Search for: Vitus, C. M.; Search for: Isaacs, H. S.; Search for: Fraser, J.1; Search for: Graham, M. J.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | Symposium on critical factors in localized corrosion II, October 9-11, 1995, Chicago, IL, USA |
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| Abstract | The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process. |
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| Publication date | 1996 |
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| In | |
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| NPARC number | 12338017 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 312b197b-5284-4138-adc6-bf96cfb0295e |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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