| DOI | Resolve DOI: https://doi.org/10.1016/S0039-6028(03)00083-9 |
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| Author | Search for: Tütüncü, H. M.1; Search for: Srivastava, G. P.; Search for: Tse, J. S.1 |
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| Affiliation | - National Research Council Canada. NRC Steacie Institute for Molecular Sciences
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| Format | Text, Article |
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| Subject | Adsorption kinetics; Arsenic; Density functional calculations; Gallium arsenide; Phonons |
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| Abstract | We present structural and dynamical properties of the As covered GaAs(1 1 0) surface based on ab initio density-functional calculations and a linear-response approach. Characteristic phonon modes due to a monolayer deposition of As within the epitaxially continued layer structure have been identified and compared with their counterparts on the clean GaAs(1?1?0) surface. |
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| Publication date | 2003-06-10 |
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| In | |
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| Language | English |
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| NPARC number | 12327234 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 2f216df2-6ee8-42a2-b2b8-ded858f09c96 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-02 |
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